Absence of free carriers in silicon nanocrystals grown from phosphorus- and boron-doped silicon-rich oxide and oxynitride

• Daniel Hiller,
• Julian López-Vidrier,
• Keita Nomoto,
• Michael Wahl,
• Wolfgang Bock,
• Tomáš Chlouba,
• František Trojánek,
• Sebastian Gutsch,
• Margit Zacharias,
• Dirk König,
• Petr Malý and
• Michael Kopnarski

Beilstein J. Nanotechnol. 2018, 9, 1501–1511, doi:10.3762/bjnano.9.141

• , which allows for completely N-free silicon oxide. In this work, we investigate the properties of B- and P-incorporating Si NCs embedded in pure silicon oxide compared to silicon oxynitride by atom probe tomography (APT), low-temperature photoluminescence (PL), transient transmission (TT), and current

• of P- or B-atoms has severe implications for future applications of conventional impurity doping of Si in sub-10 nm technology nodes. Keywords: atom probe tomography; doping; photoluminescence; silicon nanocrystals; transient transmission; Introduction The conductivity type and free carrier

• meaningful APT-analysis cannot be achieved. However, the absence of any significant differences between SRON:P and SRO:P suggests that the nitrogen in the oxynitride matrix will not have a notable influence on the B-distribution when SRON:B and SRO:B are compared. Photoluminescence and transient transmission